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| P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Automotive Transient Voltage Suppressors ed* Features t ten Pa DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. Breakdown Voltage 6.8 to 43V Peak Pulse Power 400W 0.205 (5.2) 0.160 (4.1) * Plastic package has underwriters laboratory flammability classification 94V-0 * Designed for under the hood applications * Exclusive patented PAR(R) oxide-passivated chip construction * 400W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% * Excellent clamping capability * Low incremental surge resistance * Very fast response time * For devices with V(BR) 10V, ID are typically less than 1.0A at TA = 150C * High temperature soldering guaranteed: 300C/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension Mechanical Data 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Available in uni-directional only Dimensions in inches and (millimeters) *Patent #'s 4,980,315 5,166,769 5,278,094 Case: JEDEC DO-204AL molded plastic body over passivated junction Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.012 oz., 0.3 g Packaging codes/options: 1/5K per Bulk Box, 50K/box 4/5.5K per 13" Reel (52mm Tape), 22K/box 23/3K per Ammo Box (52mm Tape), 27K/box Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Peak pulse power dissipation with a 10/1000s waveform(1) (Fig. 1) Peak pulse current with a 10/1000s waveform(1) (Fig.3) Steady state power dissipation at TL = 75C lead lengths 0.375" (9.5mm)(2) Peak forward surge current, 8.3ms single half sine-wave (3) Maximum instantaneous forward voltage at 25A Operating junction and storage temperature range Symbol PPPM IPPM PM(AV) IFSM VF TJ, TSTG Value Minimum 400 See Next Table 1.0 40 3.5 -65 to +185 Unit W A W A V C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2 (2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40mm) per Fig. 5 Document Number 88364 03-May-02 www.vishay.com 1 P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) Breakdown Voltage V(BR)(1) at IT (V) Device Type Min Max Test Current IT (mA) Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID (A) TJ = 150C Maximum Maximum Peak Pulse Reverse Surge Leakage Current at VWM IPPM(2) ID (A) (A) Maximum Clamping Voltage at lPPM VC (V) Maximum Temp. Coefficient of V(BR) (% / C) P4KA6.8 P4KA6.8A P4KA7.5 P4KA7.5A P4KA8.2 P4KA8.2A P4KA9.1 P4KA9.1A P4KA10 P4KA10A P4KA11 P4KA11A P4KA12 P4KA12A P4KA13 P4KA13A P4KA15 P4KA15A P4KA16 P4KA16A P4KA18 P4KA18A P4KA20 P4KA20A P4KA22 P4KA22A P4KA24 P4KA24A P4KA27 P4KA27A P4KA30 P4KA30A P4KA33 P4KA33A P4KA36 P4KA36A P4KA39 P4KA39A P4KA43 P4KA43A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.3 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.0 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 300 300 150 150 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1000 1000 500 500 200 200 50 50 20 20 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.2 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 0.057 0.057 0.060 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 Notes: (1) V(BR) measured after IT applied for 300s, IT = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88364 03-May-02 P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve PPPM -- Peak Pulse Power (kW) Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 Fig. 2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 100 75 50 1 25 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms 0 0 25 50 75 100 125 150 175 200 td -- Pulse Width (sec.) TA -- Ambient Temperature (C) Fig. 3 - Pulse Waveform 150 20,000 tr = 10sec. Peak Value IPPM TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 10,000 Fig. 4 - Typical Junction Capacitance TJ = 25C f = 1.0MHz Vsig = 50mVp-p Measured at Zero Bias IPPM -- Peak Pulse Current, % IRSM 100 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. CJ -- Junction Capacitance (pF) 1,000 Measured at Stand-Off Voltage, VWM td 0 0 1.0 2.0 3.0 4.0 100 1.0 10 100 200 t -- Time (ms) V(BR) -- Breakdown Voltage (V) PM(AV), Steady State Power Dissipation (W) Fig. 5 - Steady State Power Derating Curve IFSM -- Peak Forward Surge Current (A) 1.00 200 Fig. 6 - Maximum Non-Repetitive/Peak Forward Surge Current TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 0.75 L = 0.375" (9.5mm) Lead Lengths 100 0.50 1.58 x 1.58 x 0.040" (40 x 40 x 1mm) Copper Heat Sinks 0.25 50 0 10 1 5 10 50 100 0 25 50 75 100 125 150 175 200 TL -- Lead Temperature (C) Number of Cycles at 60 Hz Document Number 88364 03-May-02 www.vishay.com 3 |
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